Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Three-micron cw stimulated emission from a new Er{sup 3+} : BaLu{sub 2}F{sub 8} laser crystal subjected to laser-diode pumping

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1];  [2]; ; ; ;  [3]
  1. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation)
  2. Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)
  3. Optisches Institut, Technische Universitat, Berlin (Germany)
A new laser based on an orthorhombic Er{sup 3+} : BaLu{sub 2}F{sub 8} crystal was developed. This laser generated cw {lambda} =3 {mu}m radiation at 300 K when pumped with an InGaAs laser diode. (letters to the editor)
OSTI ID:
21437743
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 2 Vol. 28; ISSN 1063-7818
Country of Publication:
United States
Language:
English