Asymptotically Correct Finite Difference Schemes for Highly Oscillatory ODEs
- Inst. f. Analysis u. Scientific Computing, Technische Universitaet Wien, Wiedner Hauptstr. 8, A-1040 Wien (Austria)
We are concerned with the numerical integration of ODE-initial value problems of the form {epsilon}{sup 2{phi}}{sub xx}+a(x){phi} = 0 with given a(x){>=}a{sub 0}>0 in the highly oscillatory regime 0<{epsilon}(appearing as a stationary Schroedinger equation, e.g.). In two steps we derive an accurate finite difference scheme that does not need to resolve each oscillation: With a WKB-ansatz the dominant oscillations are ''transformed out'', yielding a much smoother ODE. For the resulting oscillatory integrals we devise an asymptotic expansion both in {epsilon} and h. The resulting scheme typically has a step size restriction of h = o({radical}({epsilon})). If the phase of the WKB-transformation can be computed explicitly, then the scheme is asymptotically correct with an error bound of the order o({epsilon}{sup 3}h{sup 2}). As an application we present simulations of a 1D-model for ballistic quantum transport in a MOSFET (metal oxide semiconductor field-effect transistor).
- OSTI ID:
- 21428589
- Journal Information:
- AIP Conference Proceedings, Vol. 1281, Issue 1; Conference: ICNAAM 2010: International conference of numerical analysis and applied mathematics 2010, Rhodes (Greece), 19-25 Sep 2009; Other Information: DOI: 10.1063/1.3498358; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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GENERAL PHYSICS
ALGEBRA
ASYMPTOTIC SOLUTIONS
COMPUTERIZED SIMULATION
INTEGRAL EQUATIONS
MATRICES
MOSFET
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SCHROEDINGER EQUATION
WKB APPROXIMATION
APPROXIMATIONS
CALCULATION METHODS
DIFFERENTIAL EQUATIONS
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FIELD EFFECT TRANSISTORS
MATHEMATICAL SOLUTIONS
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MOS TRANSISTORS
PARTIAL DIFFERENTIAL EQUATIONS
SEMICONDUCTOR DEVICES
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