Fabrication of mm-wave undulator cavities using deep x-ray lithography
- Argonne National Lab., IL (United States)
- Illinois Univ., Chicago, IL (United States)
- Wisconsin Univ., Madison, WI (United States). Center for X-Ray Lithography
The possibility of fabricating mm-wave radio frequency cavities (100-300 GHz) using deep x-ray lithography (DXRL) is being investigated. The fabrication process includes manufacture of precision x-ray masks, exposure of positive resist by x-ray through the mask, resist development, and electroforming of the final microstructure. Highly precise, two-dimensional features can be machined onto wafers using DXRL. Major challenges are: fabrication of the wafers into three-dimensional rf structures; alignment and overlay accuracy of structures; adhesion of the PMMA on the copper substrate; and selection of a developer to obtain high resolution. Rectangular cavity geometry is best suited to this fabrication technique. A 30- or 84-cell 108-GHz mm-wave structure can serve as an electromagnetic undulator. A mm-wave undulator, which will be discussed later, may have special features compared to the conventional undulator. First harmonic undulator radiation at 5.2 KeV would be possible using the Advanced Photon Source (APS) linac system, which provides a low-emittance electron beam by using an rf thermionic gun with an energy as high as 750-MeV. More detailed rf simulation, heat extraction analysis, beam dynamics using a mm-wave structure, and measurements on lOx larger scale models can be found in these proceedings.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 214263
- Report Number(s):
- ANL/ASD/CP--87536; CONF-9510119--21; ON: DE96006757
- Country of Publication:
- United States
- Language:
- English
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