Thermoelectric properties of HPHT sintered In-doped Pb{sub 0.5}Sn{sub 0.5}Te

Journal Article · Sun Aug 15 04:00:00 EDT 2010 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2010.05.036· OSTI ID:21421579

Dong, Yongkwan ^[1]; Malik, Abds-Sami ^[2]

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1. Baker Laboratory, Department of Chemistry, Cornell University, Ithaca, NY 14853-1301 (United States)
2. Diamond Innovations, 6325 Huntley Road, Worthington, OH 43085 (United States)

The thermoelectric properties of Pb{sub 0.5}Sn{sub 0.5}Te doped with In at 1.0, 2.0, and 3.0x10{sup 19}/cm{sup 3} and sintered at a high pressure and high temperature (HPHT) of 4.0 GPa and 800 or 900 {sup o}C, respectively, have been studied. All samples show p-type semiconducting behavior with positive thermopower. We find that HPHT sintering of conventionally synthesized materials improves their thermoelectric properties. The highest power factor is obtained for In doping of 2.0x10{sup 19}/cm{sup 3} with 13.5 {mu}W/cm K{sup 2} at 230 {sup o}C. The corresponding figure of merit is 1.43x10{sup -3}/K. This represents a twofold improvement in thermoelectric figure of merit, compared to the conventionally sintered materials reported in the literature. When exposed to 400 {sup o}C for 10 days, samples sintered at 900 {sup o}C exhibit more stable thermoelectric properties, while the properties of those sintered at 800 {sup o}C deteriorated. These results demonstrate that HPHT sintering is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials. - Graphical abstract: A twofold improvement in thermoelectric figure of merit (ZT) is achieved for HPHT sintered In-doped Pb{sub 0.5}Sn{sub 0.5}Te, when compared to the conventionally sintered materials of similar composition reported in the literature.

• OSTI ID: 21421579
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 8 Vol. 183; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOGENIDES
DIMENSIONLESS NUMBERS
DOPED MATERIALS
ELECTRICAL PROPERTIES
FABRICATION
LEAD COMPOUNDS
LEAD TELLURIDES
MATERIALS
PERFORMANCE
PHYSICAL PROPERTIES
POWER FACTOR
PRESSURE RANGE
PRESSURE RANGE GIGA PA
SEMICONDUCTOR MATERIALS
SINTERED MATERIALS
SINTERING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THERMOELECTRIC PROPERTIES
TIN COMPOUNDS