Set-up of an XAFS beamline for measurements between 2.4-8 keV at DORIS III

Journal Article · Wed Jun 23 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3463376· OSTI ID:21410370

Welter, Edmund ^[1]

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1. Deutsches Elektronen-Synchrotron A Research Centre of the Helmholtz Association, Notkestrasse 85, D-22607 Hamburg (Germany)

In this paper results from the commissioning phase and from first user experiments of a new EXAFS beamline at the DORIS III storage ring are presented. The bending magnet EXAFS beamline A1 underwent a complete rebuild and now covers the energy range 2.4-8 keV. A Ni-coated toroidal mirror, placed in a 2:1 focusing position and a plane mirror with one Ni coated stripe and one uncoated (SiO{sub 2}) stripe are used for effective higher harmonics suppression and focusing. The UHV-compatible fixed-exit Double Crystal Monochromator (DCM) is equipped with two Si(111) crystal pairs. The second crystal of one of the two crystal pairs is tilted by 90 deg. around the surface normal to shift the position of glitches. It allows Bragg angles between 5 deg. and 55.5 deg. and continuous scans in quick-EXAFS mode. Test measurements during the commissioning phase proved the excellent performance of the monochromator and a high quality of the XAFS spectra over the entire working range.

• OSTI ID: 21410370
• Journal Information: AIP Conference Proceedings, Vol. 1234, Issue 1; Conference: SRI 2009: 10. international conference on radiation instrumentation, Melbourne (Australia), 27 Sep - 2 Oct 2009; Other Information: DOI: 10.1063/1.3463376; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ABSORPTION SPECTROSCOPY
BRAGG REFLECTION
COMMISSIONING
CRYSTALS
FINE STRUCTURE
FOCUSING
HARMONICS
KEV RANGE 01-10
MAGNETS
MIRRORS
MONOCHROMATORS
SILICON OXIDES
SPECTRA
STORAGE RINGS
SURFACES
SYNCHROTRON RADIATION SOURCES
X-RAY SPECTROSCOPY
CHALCOGENIDES
ENERGY RANGE
EQUIPMENT
KEV RANGE
OSCILLATIONS
OXIDES
OXYGEN COMPOUNDS
RADIATION SOURCES
REFLECTION
SILICON COMPOUNDS
SPECTROSCOPY