Silicon Absolute X-Ray Detectors

Journal Article · Wed Jun 23 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3463346· OSTI ID:21410350

Seely, John F ^[1]; Korde, Raj; Sprunck, Jacob ^[2]; Medjoubi, Kadda; Hustache, Stephanie ^[3]

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1. Naval Research Laboratory, Washington, D.C. 20375 (United States)
2. International Radiation Detectors, Inc., Torrance, CA 90505-5243 (United States)
3. Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette CEDEX (France)

The responsivity of silicon photodiodes having no loss in the entrance window, measured using synchrotron radiation in the 1.75 to 60 keV range, was compared to the responsivity calculated using the silicon thickness measured using near-infrared light. The measured and calculated responsivities agree with an average difference of 1.3%. This enables their use as absolute x-ray detectors.

• OSTI ID: 21410350
• Journal Information: AIP Conference Proceedings, Vol. 1234, Issue 1; Conference: SRI 2009: 10. international conference on radiation instrumentation, Melbourne (Australia), 27 Sep - 2 Oct 2009; Other Information: DOI: 10.1063/1.3463346; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELLIPSOMETRY
KEV RANGE
LOSSES
PHOTODIODES
SILICON
SYNCHROTRON RADIATION
THICKNESS
X RADIATION
X-RAY DETECTION
BREMSSTRAHLUNG
DETECTION
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
IONIZING RADIATIONS
MEASURING METHODS
RADIATION DETECTION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS