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Title: Pyramidal pits created by single highly charged ions in BaF{sub 2} single crystals

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1]; ;  [1];  [2]
  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)
  2. Institute of Applied Physics, Vienna University of Technology, 1040 Vienna (Austria)

In various insulators, the impact of individual slow highly charged ions (eV-keV) creates surface nanostructures, whose size depends on the deposited potential energy. Here we report on the damage created on a cleaved BaF{sub 2} (111) surface by irradiation with 4.5xq keV highly charged xenon ions from a room-temperature electron-beam ion trap. Up to charge states q=36, no surface topographic changes on the BaF{sub 2} surface are observed by scanning force microscopy. The hidden stored damage, however, can be made visible using the technique of selective chemical etching. Each individual ion impact develops into a pyramidal etch pits, as can be concluded from a comparison of the areal density of observed etch pits with the applied ion fluence (typically 10{sup 8} ions/cm{sup 2}). The dimensional analysis of the measured pits reveals the significance of the deposited potential energy in the creation of lattice distortions/defects in BaF{sub 2}.

OSTI ID:
21386916
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 82, Issue 3; Other Information: DOI: 10.1103/PhysRevB.82.033403; (c) 2010 The American Physical Society; ISSN 1098-0121
Country of Publication:
United States
Language:
English