Ge quantum dot tunneling diode with room temperature negative differential resistance

Journal Article · Mon Jul 05 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3462069· OSTI ID:21367004

Oehme, M; Karmous, A; Sarlija, M; Werner, J; Kasper, E; Schulze, J ^[1]

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1. Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

We present current density-voltage characteristics of Ge quantum dot p{sup +}-i-n{sup +} tunneling diodes. The diode structure with Ge quantum dots embedded in the intrinsic region was grown by low temperature molecular beam epitaxy without any postgrowth annealing steps. The quantum dot diodes were fabricated using a low thermal budget fabrication process which preserves the Ge quantum structure. A negative differential resistance at room temperature of a Ge quantum dot tunneling diode was observed. A maximum peak to valley ratio of 1.6 at room temperature was achieved.

• OSTI ID: 21367004
• Journal Information: Applied Physics Letters, Vol. 97, Issue 1; Other Information: DOI: 10.1063/1.3462069; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTAL GROWTH
CURRENT DENSITY
ELECTRIC POTENTIAL
GERMANIUM
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TUNNEL DIODES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
HEAT TREATMENTS
MATERIALS
METALS
NANOSTRUCTURES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TEMPERATURE RANGE