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Title: Atom probe microscopy of three-dimensional distribution of silicon isotopes in {sup 28}Si/{sup 30}Si isotope superlattices with sub-nanometer spatial resolution

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3236673· OSTI ID:21361878
; ; ;  [1];  [2]; ; ;  [3]
  1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
  2. Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)
  3. Toshiba Nanoanalysis Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583 (Japan)

Laser-assisted atom probe microscopy of 2 nm period {sup 28}Si/{sup 30}Si isotope superlattices (SLs) is reported. Three-dimensional distributions of {sup 28}Si and {sup 30}Si stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

OSTI ID:
21361878
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 7; Other Information: DOI: 10.1063/1.3236673; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English