A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3267151· OSTI ID:21359405

Fernandez-Garrido, S; Grandal, J; Calleja, E; Sanchez-Garcia, M A; Lopez-Romero, D ^[1]

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1. ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730-850 deg. C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.

• OSTI ID: 21359405
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 12; Other Information: DOI: 10.1063/1.3267151; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
DESORPTION
DIFFUSION LENGTH
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
PLASMA
PYROLYSIS
SEMICONDUCTOR MATERIALS
SILICON
CHEMICAL REACTIONS
CRYSTAL GROWTH METHODS
DECOMPOSITION
DIMENSIONS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LENGTH
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SORPTION
THERMOCHEMICAL PROCESSES