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Title: Producing optimized ensembles of nitrogen-vacancy color centers for quantum information applications

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3271579· OSTI ID:21359404
; ; ; ; ;  [1]; ; ;  [2]
  1. School of Physics, University Of Melbourne, Melbourne 3010 (Australia)
  2. Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, California 94304 (United States)

Quantum information applications place stringent demands on the development of platforms that can host them. Color centers in diamond have been identified as important media for quantum information processing. Accordingly, the photoluminescence properties of nitrogen-vacancy (N-V) centers in diamond created by implantation and annealing are studied at cryogenic temperatures (below 10 K). We examine high pressure high temperature and chemical vapor deposition synthetic diamonds with varying nitrogen concentration and present an accurate method to estimate the concentration of the (N-V) centers created by ion implantation. The ion irradiation route produced up to 6 ppm of optically active (N-V) centers, while nitrogen implantation yielded up to 3 ppm of optically active (N-V) with 8% conversion efficiency. However, a broadening of the (N-V){sup -} zero phonon line was observed in all samples.

OSTI ID:
21359404
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 12; Other Information: DOI: 10.1063/1.3271579; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English