Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO{sub 2}/Si interface by CO annealing

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3173278· OSTI ID:21359333

Pongracz, A ^[1]; Hoshino, Y ^[1]; D'Angelo, M; Ganem, J -J; Trimaille, I; Vickridge, I ^[1]; Cavellin, C Deville ^[1]; Battistig, G ^[2]; Josepovits, K V ^[3]

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1. Institut des NanoSciences de Paris, Universite Pierre et Marie Curie, UMR 7588 du CNRS, 140 rue de Lourmel, 75015 Paris (France)
2. Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest H-1525 (Hungary)
3. Budapest University of Technology and Economics, Muegyetem rkp. 3-9, Budapest H-1111 (Hungary)

The epitaxial growth of beta-Sic nanocrystals at the Si{sup 16}O{sub 2}/Si(100) interface under CO annealing has been studied using {sup 13}C{sup 18}O and isotopically sensitive nuclear reaction analysis and secondary ion mass spectrometry analysis. The results show that the amount of SiC increases linearly with the CO pressure and the annealing time. We demonstrate that the CO diffuses as a molecule in the silica and that for each C atom reacting to form SiC, an oxygen atom is incorporated in the vicinity of the interface. The linear and the parabolic rate constants corresponding to an adapted Deal and Grove model are also determined.

• OSTI ID: 21359333
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 2; Other Information: DOI: 10.1063/1.3173278; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CARBON MONOXIDE
CRYSTAL GROWTH
EPITAXY
MASS SPECTRA
MASS SPECTROSCOPY
NANOSTRUCTURES
NUCLEAR REACTION ANALYSIS
OXYGEN
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON OXIDES
CARBIDES
CARBON COMPOUNDS
CARBON OXIDES
CHALCOGENIDES
CHEMICAL ANALYSIS
CRYSTAL GROWTH METHODS
ELEMENTS
HEAT TREATMENTS
KINETICS
MATERIALS
NONDESTRUCTIVE ANALYSIS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY