Nickel-induced crystallization of amorphous Ge film for blue-ray recording under thermal annealing and pulsed laser irradiation
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 40254 (China)
The crystallization kinetics of a-Ge thin film induced by a thin Ni layer under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Ge in the a-Ge/Ni bilayer recording film were significantly reduced to 385 deg. C and 2.4 eV, respectively, due to the fast Ge diffusion in the already formed germanide phases. The reaction exponent m of approx1.7 for the a-Ge/Ni bilayer corresponds to a crystallization process in which grain growth occurs with nucleation and the nucleation rate decreases with the progress of the grain growth process. Under pulsed laser irradiation, the maximum data-transfer rates of 22, 56, 74, and 112 Mbits/s can be achieved in the write-once blue-ray disk at the recording powers of 3, 4, 5, and 6 mW, respectively.
- OSTI ID:
- 21359322
- Journal Information:
- Journal of Applied Physics, Vol. 106, Issue 2; Other Information: DOI: 10.1063/1.3183956; (c) 2009 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation
Crystallization kinetics of Cu/a-Si bilayer recording film under thermal and pulsed laser annealing