Spectra and energy levels of Yb{sup 3+} in AlN

Journal Article · Wed Jul 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3159890· OSTI ID:21359269

Koubaa, T; Dammak, M; Kammoun, M ^[1]; Jadwisienczak, W M; Lozykowski, H J ^[2]; Anders, A ^[3]

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1. Departement de Physique, Groupe de Physique Theorique, Laboratoire de Physique Appliquees, Faculte des Sciences de Sfax, Sfax 3018 (Tunisia)
2. School of Electrical Engineering and Computer Science, Ohio University, Ohio 4570 (United States)
3. Plasma Applications Group, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)

We report on the crystal-field energy levels calculation of Yb{sup 3+} ions in an AlN host using crystal-field theory. Cathodoluminescence spectra of AlN grown by molecular beam epitaxy on Si (0001) substrate and doped by implantation with ytterbium (Yb) ions were critically examined assuming that Yb{sup 3+} ions are involved in different sites. The comparison between the emission spectra of Yb{sup 3+} ions in the GaN and AlN indicates the presence of some similarities between the lattice locations of Yb{sup 3+} ions in these hosts. We demonstrate that assuming the existence of a substitutional Yb{sub Al(Ga)} site and a V{sub N}-Yb complex defect in AlN (GaN) lattice, a good agreement between the measured and calculated energy values of Yb{sup 3+} ion transition lines can be obtained. Furthermore, we have investigated the Zeeman g{sub ||}) and g{sub perpendicular}) parameters for the Yb{sup 3+} ion in an Al substitutional site as well as in the V{sub N}-Yb complex using the perturbation theory.

• OSTI ID: 21359269
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 1; Other Information: DOI: 10.1063/1.3159890; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CATHODOLUMINESCENCE
CRYSTAL FIELD
CRYSTAL GROWTH
CRYSTALS
DOPED MATERIALS
EMISSION SPECTRA
ENERGY LEVELS
GALLIUM NITRIDES
ION IMPLANTATION
MOLECULAR BEAM EPITAXY
PERTURBATION THEORY
SEMICONDUCTOR MATERIALS
SUBSTRATES
VACANCIES
YTTERBIUM
YTTERBIUM COMPLEXES
YTTERBIUM IONS
ZEEMAN EFFECT
ALUMINIUM COMPOUNDS
CHARGED PARTICLES
COMPLEXES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
IONS
LUMINESCENCE
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
PHOTON EMISSION
PNICTIDES
POINT DEFECTS
RARE EARTH COMPLEXES
RARE EARTHS
SPECTRA