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Title: Electrical characterization and modeling of the Au/CaF{sub 2}/nSi(111) structures with high-quality tunnel-thin fluoride layer

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3110066· OSTI ID:21356116
 [1]; ; ;  [2];  [2];  [3]
  1. Institut fuer Elektronische Bauelemente und Schaltungstechnik, TU Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)
  2. A. F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Str., 194021 St.-Petersburg (Russian Federation)
  3. Christian-Dopper-Laboratory and Institut fuer Mikroelektronik, TU Wien, Gusshausstrasse 25-29, A-1040 Vienna (Austria)

Au/CaF{sub 2}/nSi(111) structures with 4-5 monolayers of epitaxial fluoride are fabricated and electrically tested. The leakage current in these structures was substantially smaller than in similar samples reported previously. Simulations adopting a Franz-type dispersion relation with Franz mass of m{sub F}approx1.2m{sub 0} for carriers in the forbidden band of CaF{sub 2} reproduced the measured current-voltage curves quite satisfactorily. Roughly, these curves could also be reproduced using the parabolic dispersion law with the electron mass of m{sub e}=1.0m{sub 0}, which is a material constant rather than a fitting parameter. Experimental facts and their comparison to modeling results allow qualification of the crystalline quality of fabricated structures as sufficient for device applications.

OSTI ID:
21356116
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 8; Other Information: DOI: 10.1063/1.3110066; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English