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Title: Cubic Sc{sub 1-x}Al{sub x}N solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3132862· OSTI ID:21352226
; ; ;  [1];  [2];  [3]
  1. Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, S-581 83 Linkoeping (Sweden)
  2. Department of Physics, Chemistry and Biology (IFM), Theory and Modeling Division, Linkoeping University, S-581 83 Linkoeping (Sweden)
  3. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)

Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc{sub 1-x}Al{sub x}N (0<=x<=1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 deg. C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc{sub 1-x}Al{sub x}N solid solutions with AlN molar fractions up to approx60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc{sub 1-x}Al{sub x}N domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc{sub 1-x}Al{sub x}N(0001)||ScN(111) with Sc{sub 1-x}Al{sub x}N[1210]||ScN[110], Sc{sub 1-x}Al{sub x}N(1011)||ScN(111) with Sc{sub 1-x}Al{sub x}N[1210]||ScN[110], and Sc{sub 1-x}Al{sub x}N(1011)||ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc{sub 0.50}Al{sub 0.50}N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN.

OSTI ID:
21352226
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 11; Other Information: DOI: 10.1063/1.3132862; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English