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Liquid-like phase formation in Gd{sub 2}Zr{sub 2}O{sub 7} by extremely ionizing irradiation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3124370· OSTI ID:21352223
; ;  [1];  [2];  [3];  [4];  [5];  [6]
  1. Departments of Geological Sciences and Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-1005 (United States)
  2. Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  3. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)
  4. GSI, Helmholtzzentrum fuer Schwerionenforschung, Planckstr.1, 64291 Darmstadt (Germany)
  5. Institut de Physique Nucleaire (IPN), CNRS-IN2P3, 91406 Orsay (France)
  6. Centre de Recherche sur les Ions, les Materiaux et la Photonique, CEA-CNRS-ENSICAEN-Univ. de Caen, 14070 Caen (France)

Isometric Gd{sub 2}Zr{sub 2}O{sub 7} with the ordered, pyrochlore structure has an extremely high resistance to radiation-induced amorphization. Ion-beam irradiations at keV to GeV energies result in a disordered, defect-fluorite structure that remains crystalline to very large fluences. However, we report liquid-like phase formation of droplet-like surface hillocks and quenched molten tracks in Gd{sub 2}Zr{sub 2}O{sub 7}. The extremely high energy density of 12-MeV C{sub 60} clusters creates tracks with substantial volumes of amorphous material, accompanied by the formation of nanocrystals of the disordered, defect-fluorite structure. This is the first evidence of irradiation-induced amorphization of Gd{sub 2}Zr{sub 2}O{sub 7}. In contrast, irradiation of Gd{sub 2}Zr{sub 2}O{sub 7} pyrochlore with swift heavy ions of U resulted in an order-disorder transformation to defect-fluorite without any evidence of amorphization. Thermal-spike calculations highlight the dominance of the effect of deposited energy density, controlled by the projectile velocity, as compared with the energy loss.

OSTI ID:
21352223
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English