Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers

Journal Article · Mon May 03 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3427310· OSTI ID:21347417

Das, A; Kotsar, Y; Kandaswamy, P K; Gayral, B; Monroy, E ^[1]; Magalhaes, S; Lorenz, K; Alves, E ^[2]; Ruterana, P ^[3]

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1. CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
2. Unidade de Fisica e Aceleradores, Instituto Tecnologico e Nuclear, Estrada Nacional 10, P-2686-953 Sacavem (Portugal)
3. CIMAP, UMR 6252 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France)

We report on the growth kinetics of semipolar (11-22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth.

• OSTI ID: 21347417
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALLOGRAPHY
DEPOSITION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM
INDIUM COMPOUNDS
LAYERS
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
PLASMA
SEMICONDUCTOR MATERIALS
STABILIZATION
SUBSTRATES