skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Plasma-assisted molecular beam epitaxy of high quality In{sub 2}O{sub 3}(001) thin films on Y-stabilized ZrO{sub 2}(001) using In as an auto surfactant

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3276910· OSTI ID:21347363
; ;  [1];  [2]
  1. Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
  2. Department of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)

The surface roughness of In{sub 2}O{sub 3}(001) films is a roadblock to potential semiconductor applications of this material. Using plasma-assisted molecular beam epitaxy we found that In{sub 2}O{sub 3}(001) films grow rough by the formation of (111) facets and In{sub 2}O{sub 3}(111) films grow smooth without facetting due to the conventionally used (oxygen-rich) conditions. This behavior indicates that the (111) surface is thermodynamically prefered over the (001) surface. We demonstrate that under indium-rich growth conditions these thermodynamics are changed allowing In{sub 2}O{sub 3}(001) films to grow smoothly without facetting. Surface indium plays a key role by acting as an auto surfactant that lowers the surface free energy difference between the (001) and the (111) surface.

OSTI ID:
21347363
Journal Information:
Applied Physics Letters, Vol. 95, Issue 26; Other Information: DOI: 10.1063/1.3276910; (c) 2009 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English