The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

Journal Article · Mon Dec 28 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3275712· OSTI ID:21347361

Kudrawiec, R; Poloczek, P; Misiewicz, J ^[1]; Korpijaervi, V -M; Laukkanen, P; Pakarinen, J; Dumitrescu, M; Guina, M; Pessa, M ^[2]

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1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
2. Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere (Finland)

The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

• OSTI ID: 21347361
• Journal Information: Applied Physics Letters, Vol. 95, Issue 26; Other Information: DOI: 10.1063/1.3275712; (c) 2009 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
CRYSTALS
FINE STRUCTURE
GALLIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
NONMETALS
PNICTIDES