Effects of rf-bias power on plasma parameters in a low gas pressure inductively coupled plasma

Journal Article · Sun Feb 14 23:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3293295· OSTI ID:21347273

Lee, Hyo-Chang; Lee, Min-Hyong; Chung, Chin-Wook ^[1]

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1. Department of Electrical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

Remarkable changes of the electron temperature and the plasma density by increasing bias power were observed in low gas pressure inductively coupled plasma (ICP) by the measurement of electron energy distribution function (EEDF). As the bias power increases, the electron temperature increased with accompanying the evolution of the EEDF from a bi-Maxwellian to a Maxwellian distribution. However, a different trend of the plasma density was observed with a dependence on the ICP powers. When the ICP power was relatively small or the discharge is in capacitive mode (E mode), the plasma density increased considerably with the bias power, while decrease of the plasma density was observed when the discharge is in inductive mode (H mode). The change of the plasma density can be explained by the balance between total power absorption and power dissipation.

• OSTI ID: 21347273
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CONFINEMENT
ELECTRIC DISCHARGES
ELECTRON TEMPERATURE
ELECTRONS
ELEMENTARY PARTICLES
ENERGY SPECTRA
FERMIONS
H-MODE PLASMA CONFINEMENT
INSTABILITY
ION TEMPERATURE
LEPTONS
MAGNETIC CONFINEMENT
PLASMA
PLASMA CONFINEMENT
PLASMA DENSITY
PLASMA INSTABILITY
SORPTION
SPECTRA