FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING

Journal Article · Thu Jul 23 00:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3203244· OSTI ID:21344299

Cheng, H H ^[1]; Alkaisi, M M ^[2]; Wu, S E; Liu, C P ^[3]

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1. Centre for Microscopy and Microanalysis, Australian Institute for Bioengineering and Nanotechnology, University of Queensland, Queensland 4072 (Australia)
2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140 (New Zealand)
3. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO{sub 2} substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically characterised using a semiconductor analyser that showed good ohmic contact to the electrodes. In this paper, the fabrication experiments and the characterisation results for Bi nanowires as small as 50 nm in diameter are presented. Several FIB issues involved in Bi device making and ohmic contacts to Bi nanowires will also be discussed.

• OSTI ID: 21344299
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1151; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
BEAMS
BISMUTH
CHALCOGENIDES
CHARGED PARTICLES
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
ESTERS
EVAPORATION
FABRICATION
FILMS
GALLIUM IONS
ION BEAMS
IONS
KEV RANGE
MACHINING
MATERIALS
METALS
MICROSCOPY
MILLING
NANOSTRUCTURES
ORGANIC COMPOUNDS
ORGANIC POLYMERS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PLATINUM
PLATINUM METALS
PMMA
POLYACRYLATES
POLYMERS
POLYVINYLS
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACES
TRANSITION ELEMENTS