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Title: Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3192272· OSTI ID:21344264
;  [1]; ;  [2]
  1. Solid Stat Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)
  2. Plasma Physics Research Center Science and Research Campus of Islamic Azad University, 14665-678 Tehran (Iran, Islamic Republic of)

In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

OSTI ID:
21344264
Journal Information:
AIP Conference Proceedings, Vol. 1150, Issue 1; Conference: 3. international meeting on frontiers in physics, Kuala Lumpur (Malaysia), 12-16 Jan 2009; Other Information: DOI: 10.1063/1.3192272; (c) 2009 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English

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