Theoretical Modeling of Femtosecond Pulsed Laser Ablation of Silicon
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Femtosecond (fs) laser ablation yield of semiconductors critically depends on pulse shape in time and space domain, laser wavelength and fluence. We have carried out a theoretical study of fs-pulsed laser interaction with silicon to optimize the ablation process using two-temperature model for laser pulse ({lambda} = 800 nm), which is rectangular in time domain pulse (width = 100 fs) and uniform intensity in circular cross-section of 100 {mu}m diameter. We have calculated ablation threshold, depth of material removal per pulse and refractive index change of silicon after irradiated by laser pulse and compared with the available experimental results. The formation of fs-laser induced periodic sub-wavelength surface grating structures on the silicon is also discussed within the frame work of carrier induced nonlinear effect.
- OSTI ID:
- 21316828
- Journal Information:
- AIP Conference Proceedings, Vol. 1147, Issue 1; Conference: ICTOPON-2009: International conference on transport and optical properties of nanomaterials, Allahabad (India), 5-8 Jan 2009; Other Information: DOI: 10.1063/1.3183427; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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