Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Physical Review. A

DOI:https://doi.org/10.1103/PHYSREVA.80.043834· OSTI ID:21316500

Roppo, V ^[1]; Cojocaru, C; Trull, J; Vilaseca, R ^[1]; Raineri, F; Halioua, Y; Raj, R; Sagnes, I ^[2]; D'Aguanno, G; Scalora, M ^[3]

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1. Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain)
2. Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France)
3. Charles M. Bowden Research Facility, US Army RDECOM, Redstone Arsenal, Alabama 35803 (United States)

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.

• OSTI ID: 21316500
• Journal Information: Physical Review. A, Vol. 80, Issue 4; Other Information: DOI: 10.1103/PhysRevA.80.043834; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CONVERSION
EFFICIENCY
GALLIUM ARSENIDES
HARMONIC GENERATION
HARMONICS
SEMICONDUCTOR MATERIALS