CdS Film Thickness Characterization By R. F. Magnetron Sputtering

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3160142· OSTI ID:21308689

Hashim, Uda; Rahman, Kasim Abdul ^[1]; Hakim,; Othman, M Azri ^[2]

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1. Novel Device Research Group, Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, (UniMAP), P.O Box 77, d/a Pejabat Pos Besar, 01000 Kangar, Perlis (Malaysia)
2. Advanced Materials Research Centre (AMREC), Lot 34, Jalan Hi-Tech 2/3, Kulim Hi-Tech Park, 09000 Kulim, Kedah (Malaysia)

In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from 200 deg. C to 400 deg. C in 50 deg. C steps, using a capacitive coupled magnetron cathode with 13.65 MHz that at higher magnetron power. After all investigations, it was concluded that 300 deg. C substrate temperature is suitable for producing CdS films on silicon wafer with RF magnetron sputtering and the examined properties (good crystallinity and low resistivity) of this film show its feasibility for technological purposes, especially for light sensor cells.

• OSTI ID: 21308689
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1136; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM
CADMIUM SULFIDES
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
FILMS
IMPURITIES
MAGNETRONS
MHZ RANGE
RF SYSTEMS
SENSORS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION