Resistance of domain walls created by means of a magnetic force microscope in transversally magnetized epitaxial Fe wires

Journal Article · Mon Jul 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3187219· OSTI ID:21294195

Hassel, C; Stienen, S; Roemer, F M; Meckenstock, R; Dumpich, G; Lindner, J ^[1]

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1. Fachbereich Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universitaet Duisburg-Essen, 47048 Duisburg (Germany)

Magnetic domain walls are created in a controllable way in transversally magnetized epitaxial Fe wires on GaAs(110) by approaching a magnetic force microscope (MFM) tip. The electrical resistance-change due to the addition of these domain walls is measured. The anisotropic magnetoresistance as well as the intrinsic domain wall resistance contribute to the resistance-change. The efficiency of this procedure is proven by MFM images, which are obtained subsequent to the domain wall creation at a larger sample-to-probe distance. The contribution of the anisotropic magnetoresistance is calculated using micromagnetic calculations, thus making it possible to quantify the intrinsic domain wall resistance.

• OSTI ID: 21294195
• Journal Information: Applied Physics Letters, Vol. 95, Issue 3; Other Information: DOI: 10.1063/1.3187219; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
IRON
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
MICROSCOPES
WALLS
WIRES