Resistance switching at the Al/SrTiO{sub 3-x}N{sub y} anode interface
- Solid State Chemistry and Catalysis, Empa, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)
- Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)
The electroformation and resistance switching behavior of Al/SrTiO{sub 3-x}N{sub y}/Al have been investigated. The resistance of Al/SrTiO{sub 3-x}N{sub y}/Al irreversibly increases when voltages higher than a certain threshold voltage are applied. A bistable resistance switching develops at one of the Al electrodes that performs as the anode. The formation of stacking faults in SrTiO{sub 3-x}N{sub y} during preparation by microwave plasma treatment is a prerequisite for the occurrence of switching as confirmed by site-specific high resolution transmission electron microscopy at the electrode interfaces. The resistance switching effect is discussed by considering the role of stacking fault defects in the oxygen/nitrogen diffusion at the anode metal-oxynitride interface.
- OSTI ID:
- 21294105
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 21; Other Information: DOI: 10.1063/1.3139761; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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