Spin polarization of Fe{sub 4}N thin films determined by point-contact Andreev reflection

Journal Article · Mon May 18 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3140459· OSTI ID:21294084

Narahara, A; Ito, K; Suemasu, T ^[1]; Takahashi, Y K; Ranajikanth, A; Hono, K ^[2]

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1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)
2. National Institute for Materials Science, Tsukuba 305-0047, Japan and University of Tsukuba, Tsukuba 305-0047 (Japan)

The spin polarization of (100)-oriented {gamma}{sup '}-Fe{sub 4}N layers grown on MgO(001) substrates by molecular beam epitaxy was deduced from point contact Andreev reflection measurements, and the value was compared with that of {alpha}-Fe. The spin polarization (P) for {gamma}{sup '}-Fe{sub 4}N is approximately 0.59 at 7.8 K. This value is distinctly larger than that for {alpha}-Fe (P=0.49 at 7.8 K) measured with an identical setting. The mechanism of enhanced spin polarization in {gamma}{sup '}-Fe{sub 4}N is discussed.

• OSTI ID: 21294084
• Journal Information: Applied Physics Letters, Vol. 94, Issue 20; Other Information: DOI: 10.1063/1.3140459; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRIC CONTACTS
IRON NITRIDES
IRON-ALPHA
LAYERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
SPIN
SPIN ORIENTATION
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
THIN FILMS