Ultradense phosphorus in germanium delta-doped layers

Journal Article · Mon Apr 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3123391· OSTI ID:21294046

Scappucci, G ^[1]; Capellini, G ^[2]; Lee, W C. T.; Simmons, M Y ^[3]

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1. School of Physics, Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, New South Wales 2052 (Australia)
2. Dipartimento di Fisica, Universita di Roma Tre, Via della Vasca Navale 84, 00146 Roma (Italy)
3. School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia)

Phosphorus (P) in germanium (Ge) {delta}-doped layers are fabricated in ultrahigh vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultranarrow 2-nm-wide layer with an electrically active sheet carrier concentration of 4x10{sup 13} cm{sup -2} at 4.2 K. These results open up the possibility of ultranarrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.

• OSTI ID: 21294046
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CARRIER DENSITY
CRYSTAL GROWTH
DOPED MATERIALS
FIELD EFFECT TRANSISTORS
GERMANIUM
LAYERS
MOLECULAR BEAM EPITAXY
PHOSPHINES
PHOSPHORUS
SEMICONDUCTOR MATERIALS