Identification of the gallium vacancy-oxygen pair defect in GaN
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
- Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617 (United States)
- R and D Division, Furukawa Co., Ltd., Tsukuba, Ibaraki 305-0856 (Japan)
- Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
- Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan)
Cation vacancies like V{sub Ga}, V{sub Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V{sub Ga}O{sub N} pair in GaN which is the model material for the III-nitrides and their alloys.
- OSTI ID:
- 21287083
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 80, Issue 15; Other Information: DOI: 10.1103/PhysRevB.80.153202; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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