In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

Journal Article · Wed Jul 15 04:00:00 EDT 2009 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.80.045313· OSTI ID:21287047

Richard, M -I ^[1]; Schuelli, T U; Renaud, G ^[1]; Wintersberger, E; Chen, G; Bauer, G ^[2]; Holy, V ^[3]

---

1. Departement de Recherche Fondamentale sur la Matiere Condensee/SP2M/NRS, CEA Grenoble, 17 Avenue des Martyrs, F-38054 Grenoble Cedex 9 (France)
2. Institut fuer Halbleiter- und Festkrperphysik, Johannes Kepler Universitaet Linz, 4040 Linz (Austria)
3. Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague (Czech Republic)

The kinetics of the growth of Ge superdomes and their facets on Si(001) surfaces are analyzed as a function of deposited Ge thickness for different growth temperatures and at a low growth rate by in situ grazing-incidence small-angle x-ray scattering in combination with in situ grazing-incidence x-ray diffraction. At a low growth rate, intermixing is found to be enhanced and superdomes are formed already at lower coverages than previously reported. In addition, we observe that at the dome-to-superdome transition, a large amount of material is transferred into dislocated islands, either by dome coalescence or by anomalous coarsening. Once dislocated islands are formed, island coalescence is a rare event and introduction of dislocations is preferred. The superdome growth is thus stabilized by the insertion of dislocations during growth.

• OSTI ID: 21287047
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 4 Vol. 80; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COALESCENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
DISLOCATIONS
EVOLUTION
GERMANIUM
PHASE TRANSFORMATIONS
RELAXATION
SEMICONDUCTOR MATERIALS
SILICON
SMALL ANGLE SCATTERING
SOLIDS
SUBSTRATES
SURFACES
THICKNESS
X-RAY DIFFRACTION