Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides
- Belarussian State University of Informatics and Radioelectronics (Belarus)
- Belarussian State University (Belarus)
The pseudopotential method has been used to optimize the crystal lattice and calculate the energy band spectra for iron, ruthenium and, osmium monosilicides. It is found that all these compounds are indirect-gap semiconductors with band gaps of 0.17, 0.22, and 0.50 eV (FeSi, RuSi, and OsSi, respectively). A distinctive feature of their band structure is the 'loop of extrema' both in the valence and conduction bands near the center of the cubic Brillouin zone.
- OSTI ID:
- 21260433
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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