Spin-lattice relaxation of {sup 113}Cd and {sup 19}F nuclear spins in the crystal lattice of CdF{sub 2} semiconductor crystals with DX centers
- St. Petersburg State University of Information Technology, Mechanics, and Optics (Russian Federation)
- Oregon State University (United States)
Temperature dependences of spin-lattice relaxation rates of the {sup 113}Cd and {sup 19}F lattice nuclei in the CdF{sub 2} semiconductor crystals containing bistable In and Ga impurity centers show that the relaxation mechanisms in the CdF{sub 2}:In and CdF{sub 2}:Ga crystals are different. The basic mechanism of spin-lattice relaxation of the {sup 113}Cd nuclei in the CdF{sub 2}:In crystal is the scalar contact's interaction of nuclear spins with spins of mobile charge carriers of the conduction band. In the CdF{sub 2}:Ga crystal, relaxation of the {sup 113}Cd nuclei is controlled by the contact interaction with electrons moving within a narrow band of impurity states. The same mechanism is apparently responsible for relaxation of the {sup 19}F nuclei in this crystal. In the CdF{sub 2}:In crystal, the {sup 19}F nuclei relax by the dipole-dipole interaction with electron spins localized at the hydrogen-like orbits of shallow donors.
- OSTI ID:
- 21260312
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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