Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

Journal Article · Tue Jul 15 04:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608070038· OSTI ID:21255652

Feoktistov, N A ^[1]; Danilovskii, E Yu; Kuzmin, R V ^[2]; Razumov, S V ^[3]; Kukushkin, S A; Osipov, A V ^[4]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. St. Petersburg State Polytechnical University (Russian Federation)
3. St. Petersburg State Electrotechnical University (Russian Federation)
4. Russian Academy of Sciences, Institute of Problems in Mechanical Engineering (Russian Federation)

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

• OSTI ID: 21255652
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
ERBIUM
GALLIUM NITRIDES
LAYERS
PHOTOLUMINESCENCE
RECOMBINATION
SPECTRA
TUNNEL EFFECT
ZINC
ZINC OXIDES