Phase Transformation of TiO{sub 2} from Anatase to Rutile by Thermal Annealing and Swift Heavy Ion Irradiation

Journal Article · Thu Oct 23 04:00:00 EDT 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3027167· OSTI ID:21251601

Rath, H; Dash, P; Mishra, N C ^[1]; Anand, S; Mohapatra, M ^[2]; Som, T ^[3]; Singh, U P ^[4]; Kanjilal, D; Avasthi, D K ^[5]

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1. Department of Physics, Utkal University, Bhubaneswar 751 004 (India)
2. Institute of Minerals and Materials Technology, Bhubaneswar 751 013 (India)
3. Institute of Physics, Bhubaneswar 751 005 (India)
4. KIIT University, Bhubaneswar 751024 (India)
5. Inter-University Acceleration Centre, New Delhi 110067 (India)

In the present study, we probe into the phase transition from anatase to rutile in nanocrystalline thin films under thermal annealing and swift heavy ion (SHI) irradiation. TiO{sub 2} thin films were prepared through chemical route using sol-gel and spin coating techniques on silicon (100) substrates. The structural studies of the annealed films were characterized by GAXRD and Raman spectroscopy. Though thermal annealing is known to cause transformation from anatase to rutile phase of TiO{sub 2} in a temperature interval of 700 to 900 C, in nanoparticle thin films, we found {approx}35 vol% of anatase still remains even after annealing at 1000 C. SHI irradiation by 200 MeV Ag ions on the other hand resulted in complete conversion to rutile phase at fluence of 3x10{sup 12} ions.cm{sup -2}. SHI induced thermal spike seems to be responsible for conversion of anatase to rutile phase.

• OSTI ID: 21251601
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1063; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTALS
IRRADIATION
MEV RANGE 100-1000
NANOSTRUCTURES
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RAMAN SPECTROSCOPY
RUTILE
SILICON
SILVER IONS
SOL-GEL PROCESS
SPIN
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THERMAL SPIKES
THIN FILMS
TITANIUM OXIDES