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Boron doping effects in electrochromic properties of NiO films prepared by sol-gel

Journal Article · · Solar Energy
; ;  [1]
  1. Key Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Hongshan District, Wuhan, Hubei 430070 (China)
In this paper, NiO films doped with B{sub 2}O{sub 3} were first prepared by sol-gel. The effects of boron content on the structure and electrochromic properties of NiO films were studied with X-ray diffraction (XRD), transmission electron microscopy (TEM), cyclic voltammetric (CV) and UV-vis spectrophotometer, respectively. In addition, the roughness and phase of the bleached/colored were studied by atom force microscopy (AFM). B-doped prevent the crystallization of the films. The colored state transmittance could be significantly lowered when the boron added. The NiO film doped with boron exhibited a noticeable electrochromism with a variation of transmittance up to {proportional_to}60% at the wavelength range of 300-500 nm. (author)
OSTI ID:
21236022
Journal Information:
Solar Energy, Journal Name: Solar Energy Journal Issue: 12 Vol. 83; ISSN 0038-092X; ISSN SRENA4
Country of Publication:
United States
Language:
English

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