Controlled thermal decomposition of NaSi to derive silicon clathrate compounds
- Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan)
Formation conditions of two types of sodium containing silicon clathrate compounds were determined by the controlled thermal decomposition of sodium monosilicide NaSi under vacuum. The decomposition began at 360 deg. C. Much higher decomposition temperatures and the presence of sodium metal vapor were favorable for the formation of type I clathrate compound Na{sub 8}Si{sub 46}. Type II clathrate compound Na{sub x}Si{sub 136} was obtained as a single phase at a decomposition temperature <440 deg. C under the condition without sodium metal vapor. The type I clathrate compound was decomposed to crystalline Si above 520 deg. C. The type II clathrate compound was thermally more stable, and retained at least up to 550 deg. C in vacuum. - Graphical Abstract: The optimal condition to prepare type II silicon clathrate Na{sub x}Si{sub 136} with minimal contamination of the type I phase is proposed. The starting NaSi should be thermally decomposed below 440 deg. C, and the rapid removal of Na vapor evolved is essentially important.
- OSTI ID:
- 21212167
- Journal Information:
- Journal of Solid State Chemistry, Vol. 182, Issue 1; Other Information: DOI: 10.1016/j.jssc.2008.10.007; PII: S0022-4596(08)00524-0; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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