A study of silicon escape peaks for X-ray detectors with various crystal dimensions

Journal Article · Thu Jun 10 04:00:00 EDT 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.59058· OSTI ID:21208070

Karydas, A G; Paradellis, T ^[1]

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1. N.C.S.R. 'Demokritos', Institute of Nuclear Physics, Laboratory for Material Analysis (Greece)

The necessity for accurate values of the relative ratios between silicon-escape and corresponding photopeaks is essential in accurate PIXE and XRF trace element analysis. The intensity of the silicon escape peak as a function of the energy of the incident X-ray radiation, has been extensively measured and calculated, for Si(Li) crystals having few mm of thickness. The use of Si PIN photodiodes in X-ray detection, with thickness of a few hundreds of {mu}m, makes necessary the reconsideration of the relative ratios between escape and parent peaks at least for those X-rays that can penetrate these crystals. In this case, escape of the SiK{sub {alpha}} characteristic X-ray produced near the rear side of the crystal is also possible and may have a sizeable effect. Theoretical calculations and experimental measurements of the SiK{sub {alpha}} escape peak intensity for two X-ray detectors having nominal thickness 3 mm and 0.3 mm respectively are compared.

• OSTI ID: 21208070
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 475; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTALS
ESCAPE PEAKS
ION MICROPROBE ANALYSIS
PHOTODIODES
PIXE ANALYSIS
SI SEMICONDUCTOR DETECTORS
X RADIATION
X-RAY DETECTION
X-RAY FLUORESCENCE ANALYSIS
X-RAY SPECTROSCOPY