Medical applications of amorphous silicon detectors
Journal Article
·
· AIP Conference Proceedings
- Seccion de Electronica del Estado Solido, Depto. de Ingenieria Electrica, CINVESTAV-IPN, A.P. 14 740, Mexico D.F. (Mexico)
- Centro de Estudio Aplicados al Desarrollo Nuclear, P.O. Box 6122, La Habana (Cuba)
During the last years, much interest has been dedicated to the use of PIN silicon amorphous diodes as particle and radiation detectors for medical applications. This work presents a review of the work done in the last years, including results obtained by the authors, regarding the characterization of amorphous PIN diodes fabricated on thick i-layers, deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition), with a deposition rate of 2.5 {mu}m/hr from pure SiH{sub 4} at 200 deg. C, 20 sccm, 43 Pa, RF (Radio Frequency) power of 50 mW/cm{sup 2} and from a gas mixture of 10%SiH{sub 4} in H{sub 2} with deposition rates up to 0.9 {mu}m/hr at a deposition temperature of 300 deg. C, 67 Pa, RF power of 150 mW/cm{sup 2} and flow rates of 100 sccm.
- OSTI ID:
- 21199190
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 440; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
High rate PECVD of low defect density a-Si:H on large areas
Very wide-gap and device-quality a-Si:H from highly H{sub 2} diluted SiH{sub 4} plasma decomposed by high rf power
Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy
Conference
·
Tue Jul 01 00:00:00 EDT 1997
·
OSTI ID:20085535
Very wide-gap and device-quality a-Si:H from highly H{sub 2} diluted SiH{sub 4} plasma decomposed by high rf power
Conference
·
Thu Jul 01 00:00:00 EDT 1999
·
OSTI ID:20107898
Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy
Conference
·
Mon Apr 17 00:00:00 EDT 2000
·
OSTI ID:754474