Annealing effect on structural and electrical properties of thermally evaporated Cd{sub 1-x}Mn{sub x}S nanocrystalline films
- Department of Instrumentation, Indian Institute of Science, Bangalore 560012 (India)
- School of Chemical Engineering and Technology, Chonbuk National University, Jeonju 561756 (Korea, Republic of)
- Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)
Thin films of Cd{sub 1-x}Mn{sub x}S (0 {<=} x {<=} 0.5) were deposited on glass substrates by thermal evaporation. All the films were deposited at 300 K and annealed at 573 K. The as-deposited and the annealed films were characterized for composition, structure and microstructure by using energy-dispersive analysis for X-rays, X-ray diffraction, scanning electron microscopy and atomic force microscopy. Electrical conductivity was studied in the temperature range 190-450 K. All the films exhibited wurtzite structure of the host material with the grain size varying in the range between 36 and 82 nm. Resistivity of all the films is strongly dependent on Mn content and annealing temperature and lies in the range 13-160 {omega} cm.
- OSTI ID:
- 21195019
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 12; Other Information: DOI: 10.1016/j.materresbull.2008.02.026; PII: S0025-5408(08)00074-3; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
ATOMIC FORCE MICROSCOPY
CADMIUM COMPOUNDS
CRYSTALS
ELECTRIC CONDUCTIVITY
EVAPORATION
GRAIN SIZE
MANGANESE COMPOUNDS
NANOSTRUCTURES
SCANNING ELECTRON MICROSCOPY
SULFIDES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X RADIATION
X-RAY DIFFRACTION