Investigation of InP etching mechanisms in a Cl{sub 2}/H{sub 2} inductively coupled plasma by optical emission spectroscopy
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Route de Nozay, 91460 Marcoussis (France)
Optical emission spectroscopy (OES) has been used in order to investigate the InP etching mechanisms in a Cl{sub 2}-H{sub 2} inductively coupled plasma. The authors have previously shown that anisotropic etching of InP could be achieved for a H{sub 2} percentage in the 35%-45% range where the InP etch rate also presents a local maximum [J. Vac. Sci. Technol. B 24, 2381 (2006)], and that anisotropic etching was due to an enhanced passivation of the etched sidewalls by a silicon oxide layer [J. Vac. Sci. Technol. B 26, 666 (2008)]. In this work, it is shown that this etching behavior is related to a maximum in the H atom concentration in the plasma. The possible enhancement of the sidewall passivation process in the presence of H is investigated by comparing OES measurements and etching results obtained for Cl{sub 2}-H{sub 2} and Cl{sub 2}-Ar gas mixtures.
- OSTI ID:
- 21195002
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 2; Other Information: DOI: 10.1116/1.3071950; (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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