Gallium interstitial in irradiated germanium: Deep level transient spectroscopy

Journal Article · Mon Dec 15 00:00:00 EST 2008 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.78.233201· OSTI ID:21192503

Kolkovsky, Vl; Petersen, M Christian; Larsen, A Nylandsted ^[1]; Mesli, A ^[2]; Gheluwe, J van; Clauws, P ^[3]

---

1. Department of Physics and Astronomy and Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, DK-8000 Aarhus C (Denmark)
2. Institut d'Electronique du Solide et des Systemes, CNRS/ULP, Strasbourg (France)
3. Department of Solid State Sciences, Ghent University, B-9000 Ghent (Belgium)

Two electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS spectroscopy. It is concluded that these levels, having donor and acceptor characters, respectively, are correlated with interstitial Ga atoms, formed by the Watkins-replacement mechanism via self-interstitials.

• OSTI ID: 21192503
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 23; Other Information: DOI: 10.1103/PhysRevB.78.233201; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CARRIERS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONIC STRUCTURE
GALLIUM ADDITIONS
GERMANIUM
INJECTION
INTERSTITIALS
IRRADIATION
MEV RANGE 01-10
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
VALENCE