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Title: Femtosecond laser-induced periodic surface structures revisited: A comparative study on ZnO

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3074106· OSTI ID:21186020
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  1. Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, D-12489 Berlin (Germany)

Laser-induced periodic surface structures (LIPSS) (ripples) with different spatial characteristics have been observed after irradiation of single-crystalline zinc oxide surfaces with multiple linearly polarized femtosecond pulses (150-200 fs, 800 nm) in air. For normal incident laser radiation, low spatial frequency LIPSS (LSFL) with a period (630-730 nm) close to the wavelength and an orientation perpendicular to the laser polarization have been found in the fluence range between {approx}0.7 and {approx}0.8 J/cm{sup 2} and predominantly for pulse numbers up to N=100. For lower fluences (0.5-0.7 J/cm{sup 2}), a sharp transition from the LSFL features toward the formation of high spatial frequency LIPSS (HSFL) appears at any given pulse number below N=100. The HSFL are always parallel to the LSFL, exhibit spatial periods between 200 and 280 nm, and completely substitute the LSFL for pulse numbers N>100. Additionally, the influence of the angle of incidence has been studied experimentally for both LIPSS types revealing a different behavior. Experimental evidence for surface scattered second harmonic generation is presented in the regime of HSFL formation. Moreover, we will show that the HSFL structures on ZnO surfaces can be fully explained by an extension of the existing LIPSS theories if the photoexcitation of the dielectric material (affecting its transient optical properties) is considered in the frame of a simple Drude model along with the second harmonic generation at the irradiated surface. Based on our analysis, the current models of femtosecond laser-induced LIPSS are revisited and an explanation is proposed why HSFL are observed predominantly in the subpicosecond range for below band-gap excitation of dielectrics and semiconductors.

OSTI ID:
21186020
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 3; Other Information: DOI: 10.1063/1.3074106; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English