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Title: Enhanced dielectric response of GeO{sub 2}-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3075909· OSTI ID:21186017
 [1];  [1]; ;  [1];  [2]
  1. Department of Physics, I3N, Aveiro University, 3810-193 Aveiro (Portugal)
  2. Department of Physics, Federal University of Minas Gerais, Belo Horizonte, Minas Gerais 31270-901 (Brazil)

CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic samples were prepared by solid state conventional route using stoichiometric amounts of CuO, TiO{sub 2}, and CaCO{sub 3}. Afterward the material was doped with GeO{sub 2} with concentrations up to 6% by weight and sintered at 1050 deg. C for 12 h. The influence of doping on the microstructure, vibrational modes, and dielectric properties of the material was investigated by x-ray diffraction, scanning electron microscopy coupled with an energy dispersive spectrometer, and infrared and dielectric measurements between 100 Hz and 30 MHz. The materials presented huge dielectric response, which increases with doping level relative to undoped CaCu{sub 3}Ti{sub 4}O{sub 12}. The main effect of doping on the microstructure is the segregation of Cu-rich phase in the ceramic grain boundaries. Cole-Cole modeling correlates well the effects of this segregation with the relaxation parameters obtained. The intrinsic phonon contributions for the dielectric response were obtained and discussed together with the structural evolution of the system.

OSTI ID:
21186017
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 3; Other Information: DOI: 10.1063/1.3075909; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English