Atomically smooth and single crystalline Ge(111)/cubic-Pr{sub 2}O{sub 3}(111)/Si(111) heterostructures: Structural and chemical composition study

Journal Article · Sun Feb 01 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3068198· OSTI ID:21186009

Giussani, A; Rodenbach, P; Zaumseil, P; Dabrowski, J; Kurps, R; Weidner, G; Muessig, H -J; Schroeder, T ^[1]; Storck, P ^[2]; Wollschlaeger, J ^[3]

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1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
2. SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 Muenchen (Germany)
3. University of Osnabrueck, Barbarastrasse 7, 49076 Osnabrueck (Germany)

Engineered wafer systems are an important materials science approach to achieve the global integration of single crystalline Ge layers on the Si platform. Here, we report the formation of single crystalline, fully relaxed Ge(111) films by molecular beam epitaxial overgrowth of cubic Pr oxide buffers on Si(111) substrates. Reflection high-energy electron diffraction, scanning electron microscopy, and x-ray reflectivity show that the Ge epilayer is closed, flat, and has a sharp interface with the underlying oxide template. Synchrotron radiation grazing incidence x-ray diffraction and transmission electron microscopy reveal the type-A/B/A epitaxial relationship of the Ge(111)/cubic Pr{sub 2}O{sub 3}(111)/Si(111) heterostructure, a result also corroborated by theoretical ab initio structure calculations. Secondary ion mass spectroscopy confirms the absence of Pr and Si impurities in the Ge(111) epilayer, even after an annealing at 825 deg. C.

• OSTI ID: 21186009
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL COMPOSITION
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GERMANIUM
HETEROJUNCTIONS
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PRASEODYMIUM OXIDES
REFLECTIVITY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SYNCHROTRON RADIATION
TEMPERATURE RANGE 1000-4000 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION