X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO{sub 2}/Si interface
- Groupe Photoemission, CEA/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette (France)
- CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
The presence of an ultrathin oxide layer at the high-k/SiO{sub 2} interface may result in an interfacial dipole related to the specific high-k dielectric used for the gate stacks. 1 nm HfO{sub 2}/x nmAl{sub 2}O{sub 3}/SiO{sub 2}/Si stacks with different x values (x=0, 0.4, 0.8, 1.2) have been prepared by atomic layer deposition. Using photoelectron spectroscopy, an Al-related interfacial dipole in the HfO{sub 2}/Al{sub 2}O{sub 3}/SiO{sub 2} gate stack has been identified. X-ray photoelectron spectroscopy analysis shows that the dipole is correlated with the formation of an interfacial Al-silicate. The dipole is located at the Al-silicate interface between Al{sub 2}O{sub 3} and SiO{sub 2}, and its strength increases with the increase in Al{sub 2}O{sub 3} thickness because of Al silicate growth. Such Al-related interfacial dipole should have potential applications in future positive metal-oxide-semiconductor devices.
- OSTI ID:
- 21185986
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 2; Other Information: DOI: 10.1063/1.3066906; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs
Scanning Transmission Electron Microscopy Investigations of Interfacial Layers in HfO2 Gate Stacks