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Title: Oxygen induced hysteretic current-voltage characteristics of iron-phthalocyanine thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2990060· OSTI ID:21182668
; ; ; ; ;  [1]; ;  [2];  [3]
  1. Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)
  2. Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)
  3. Department of Atomic Energy (UGC-DAE) Consortium for Scientific Research, University Grant Commission, Mumbai 400 085 (India)

Electrical transport has been investigated in amorphous and polycrystalline ({alpha}-phase) iron phthalocyanine (FePc) thin films grown by molecular beam epitaxy. Measurements carried out in the temperature range of 150-300 K showed hysteric current-voltage (I-V) characteristics at temperatures above 200 K. The I-V characteristics measured during the increasing voltage scan showed a transition from the Ohmic conduction to the trap controlled space charge limited conduction followed by a trap free conduction. During the decreasing voltage scan, trap free conduction was observed in full voltage range. The I-V hysteresis is attributed to the filling of deep surface traps created by chemisorbed oxygen. Amorphous films showed higher hysteresis as well as chemisorbed oxygen content.

OSTI ID:
21182668
Journal Information:
Journal of Applied Physics, Vol. 104, Issue 7; Other Information: DOI: 10.1063/1.2990060; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English