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Title: Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2980325· OSTI ID:21182628
;  [1]
  1. Department of Physics, University of New Hampshire, Durham, New Hampshire 03824 (United States)

We studied the development of crystallographic texture in titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature. Texture measurements were performed by x-ray pole figure analysis of the (111) and (200) diffraction peaks. For a deposition angle of 40 deg. from substrate normal, we obtained TiN biaxial textures for a range of deposition conditions using radio frequency (rf) sputtering. Typically, we find that the <111> orientation is close to the substrate normal and the <100> orientation is close to the direction of the deposition source, showing substantial in-plane alignment. We also introduced a 150 eV ion beam at 55 deg. with respect to substrate normal during rf sputtering of TiN. Ion beam enhancement caused TiN to align its out-of-plane texture along <100> orientation. In this case, (200) planes are slightly tilted with respect to the substrate normal away from the ion beam source, and (111) planes are tilted 50 deg. toward the ion beam source. For comparison, we found that HfN deposited at 40 deg. without ion bombardment has a strong <100> orientation parallel to the substrate normal. These results are consistent with momentum transfer among adatoms and ions followed by an increase in surface diffusion of the adatoms on (200) surfaces. The type of fiber texture results from a competition among texture mechanisms related to surface mobilities of adatoms, geometrical, and directional effects.

OSTI ID:
21182628
Journal Information:
Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2980325; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

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