Anisotropic etching in inductive plasma source with no rf biasing

Journal Article · Mon Sep 15 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2979715· OSTI ID:21182617

Park, Wontaek ^[1]

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1. Guan Plasma Acceleration Laboratory, 524-2, Sang-Dong, Wonmi-Ku, Bucheon City, Kyongki-Do 420-030 (Korea, Republic of)

An inductive plasma source driven with phase shifted antenna coils at 2 MHz has been developed to accelerate ions for semiconductor etching process. The experiment was carried out in SF{sub 6}/O{sub 2}/Ar gas mixtures in the pressure range between 0.3 and 0.9 mTorr and rf power between 0.6 and 1.5 kW. Measurement of the ion energy spectra behind the wafer has shown high energy ions (up to 70 eV). An anisotropic etching (without rf biasing) of a polysilicon film has been demonstrated in this experiment. The acceleration of the electrons was numerically studied based on the fluid theory. The numerical results show that electrons affected by Lorentz force and thermal pressure gradient make axial electron currents, which contribute to form axial electric fields and ion acceleration.

• OSTI ID: 21182617
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ANTENNAS
ARGON
ELECTRIC FIELDS
ENERGY SPECTRA
ETCHING
LORENTZ FORCE
OXYGEN
PHASE SHIFT
PLASMA
PRESSURE GRADIENTS
PRESSURE RANGE PA
SEMICONDUCTOR MATERIALS
SILICON
SULFUR FLUORIDES
THIN FILMS